Influence of doubling the concentration of InP/InGaAsP laser diode layers on power and photon density using Silvaco program

Amir M. Nory
International Journal of Computational and Electronic Aspects in Engineering
Volume 5: Issue 2, June 2024, pp 61-72

Author's Information
Amir M. Nory 1 
Corresponding Author
1Department of Electronic Technicals, Mosul Technical Institute, Northern Technical University, Mosul, Iraq
Amirnory@ntu.edu.iq
Research Paper -- Peer Research Papered
First online on – 30 June 2024

Open Access article under Creative Commons License

Cite this article –Amir M. Nory “Influence of doubling the concentration of InP/InGaAsP laser diode layers on power and photon density using Silvaco program”, International Journal of Computational and Electronic Aspects in Engineering, RAME Publishers, vol. 5, Issue 2, pp. 61-72, 2024.
https://doi.org/10.26706/ijceae.5.2.20240508

Abstract:-
Laser diodes (LDs) play an important role in our everyday lives. They are the smallest of all known lasers and have many common applications. It is important to recognize its characteristics and then improve them. One of the factors that greatly affects the laser intensity and its optical ability is the doping concentration (DC) of LD layers. Silvaco software was used to simulate ten layers of laser diode models based on (InP/InGaAsP) materials. The effect of doubling the DC of these models on the photon density (PD) and laser power (LP) was studied. Also, the shape of the spectrum generated as a result of changing the DC were investigated. The results showed that the (P-type) layers had a significant effect on the net doping (ND) as well as PD, which reached the highest value (17.2*107/cm3) at a photon energy (PE) of (1.02108 eV). The (N-type) layers have great affect to the emitted power of LD as reached to the value of (11.7 mW at anode current 1.4 mA/μm). The duplication process of the DC for all layers has a maximum range of ND (15.6-18.4)/cm3 and direct effect on PD of laser diode. Finally, this study explained briefly the powerful effects of increasing the doping process, especially the p-type, on the characteristics of LD devices, which were not addressed in previous studies.
Index Terms:-
doping concentration; laser diode; laser power; photon density.
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